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INCHANGE Semiconductor
isc RF Product Specification
isc Silicon NPN RF Transistor
2SC4571
DESCRIPTION *High Current-Gain--Bandwidth Product fT= 5.0 GHz TYP. @VCE = 5 V, IC = 5 mA, f = 1.0 GHz *Low COB 0.9pF TYP. @VCB = 5 V, IE = 0, f = 1.0 MHz
APPLICATIONS *Designed for use in UHF oscillator and mixer.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL PARAMETER VALUE UNIT
VCBO
Collector-Base Voltage
20
V
VCEO
Collector-Emitter Voltage
12
V
VEBO
Emitter-Base Voltage
3.0
V
IC
Collector Current-Continuous Collector Power Dissipation @TC=25 Junction Temperature
60
mA
PC
0.12
W
TJ
125
Tstg
Storage Temperature Range
-55~125
isc Websitewww.iscsemi.cn
INCHANGE Semiconductor
isc RF Product Specification
isc Silicon NPN RF Transistor
ELECTRICAL CHARACTERISTICS
TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN
2SC4571
TYP.
MAX
UNIT
ICBO
Collector Cutoff Current
VCB= 15V; IE= 0
0.1
A
IEBO
Emitter Cutoff Current
VEB= 1V; IC= 0
0.1
A
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 5mA ; IB= 0.5mA
0.5
V
hFE
DC Current Gain
IC= 5mA ; VCE= 5V
40
200
fT
Current-Gain--Bandwidth Product
IC= 5mA ; VCE= 5V
5.0
GHz
COB S21e2
Output Capacitance
IE= 0 ; VCB= 3V;f= 1.0MHz
0.9
1.2
pF
Insertion Power Gain
IC= 5mA ; VCE= 5V;f= 1.0GHz
5.0
dB
hFE Classification Rank Marking hFE T75 T75 40-80 T76 T76 60-120 T77 T77 100-200
isc Websitewww.iscsemi.cn
2
INCHANGE Semiconductor
isc RF Product Specification
isc Silicon NPN RF Transistor
2SC4571
isc Websitewww.iscsemi.cn
INCHANGE Semiconductor
isc RF Product Specification 2SC4571
isc Silicon NPN RF Transistor
S-PARAMETER
VCE = 5 V, IC = 5 mA, ZO = 50 Freque. MHz 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 2100 2200 2300 2400 2500 2600 2700 2800 2900 3000 MAG 0.874 0.752 0.625 0.523 0.444 0.396 0.359 0.336 0.318 0.307 0.299 0.294 0.292 0.292 0.293 0.296 0.298 0.300 0.302 0.310 0.314 0.318 0.313 0.328 0.335 0.339 0.345 0.349 0.356 0.361
S11
ANG -24.2 -49.1 -70.9 -89.3 -105.3 -117.4 -129.0 -138.5 -147.3 -155.3 -162.8 -169.3 -175.3 179.1 173.6 168.8 164.4 160.2 156.1 151.8 148.3 144.7 141.3 138.2 135.1 131.9 129.3 126.3 123.8 121.0 MAG 8.628 8.089 7.278 6.406 5.617 4.890 4.345 3.893 3.529 3.221 2.959 2.751 2.565 2.407 2.269 2.155 2.045 1.950 1.873 1.793 1.726 1.662 1.609 1.556 1.513 1.466 1.427 1.387 1.353 1.323
S21
ANG 152.9 135.3 121.4 110.0 101.1 94.1 88.0 82.9 78.3 74.0 70.1 66.4 62.9 59.5 56.4 53.3 50.2 47.4 44.6 41.6 38.9 36.3 33.7 31.2 28.7 26.3 23.9 21.5 19.3 17.2 4 MAG 0.032 0.054 0.068 0.079 0.088 0.097 0.105 0.114 0.122 0.131 0.140 0.149 0.158 0.167 0.177 0.186 0.195 0.206 0.215 0.225 0.235 0.245 0.255 0.265 0.274 0.284 0.294 0.304 0.315 0.323
S12
ANG 71.8 61.2 55.5 52.9 52.1 51.8 51.9 52.0 52.4 52.3 52.2 52.0 52.4 51.9 51.3 51.2 50.6 49.9 49.4 48.8 48.2 47.2 46.3 45.4 44.5 43.4 42.5 41.5 40.4 39.4 MAG 0.910 0.763 0.643 0.560 0.502 0.462 0.434 0.414 0.398 0.385 0.376 0.371 0.364 0.359 0.356 0.350 0.346 0.342 0.337 0.327 0.322 0.317 0.312 0.307 0.304 0.302 0.302 0.304 0.309 0.313
S22
ANG -18.4 -30.3 -36.7 -40.1 -42.3 -43.8 -45.2 -46.6 -47.9 -49.5 -51.0 -52.7 -54.2 -55.6 -57.3 -58.9 -60.4 -62.3 -64.5 -67.1 -69.4 -72.4 -75.3 -78.9 -82.9 -87.1 -91.0 -94.8 -98.9 -102.4
isc Websitewww.iscsemi.cn
INCHANGE Semiconductor
isc RF Product Specification
isc Silicon NPN RF Transistor
VCE = 5 V, IC = 3 mA, ZO = 50 Freque. MHz 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 2100 2200 2300 2400 2500 2600 2700 2800 2900 3000 MAG 0.923 0.844 0.746 0.660 0.575 0.516 0.461 0.423 0.396 0.375 0.362 0.349 0.343 0.339 0.336 0.337 0.338 0.337 0.339 0.345 0.348 0.351 0.357 0.361 0.367 0.371 0.376 0.381 0.387 0.392
2SC4571
S11
ANG -19.2 -39.4 -57.9 -74.5 -90.3 -102.7 -114.8 -125.2 -134.9 -143.6 -151.4 -158.8 -165.2 -171.7 -177.6 177.0 172.0 167.1 162.7 158.0 153.8 150.0 146.1 142.5 139.2 135.8 132.6 129.3 126.4 123.4 MAG 5.456 5.317 5.047 4.667 4.321 3.860 3.546 3.237 2.979 2.749 2.547 2.380 2.222 2.101 1.984 1.887 1.798 1.719 1.648 1.579 1.524 1.470 1.424 1.376 1.338 1.296 1.263 1.231 1.199 1.169
S21
ANG 157.3 142.0 128.9 118.1 108.3 100.4 93.2 87.1 81.6 76.6 72.4 68.0 64.2 60.4 57.0 53.5 50.3 47.2 44.0 41.2 38.4 35.4 32.8 30.1 27.5 25.0 22.5 20.1 17.9 15.7 MAG 0.034 0.060 0.078 0.091 0.101 0.108 0.115 0.122 0.128 0.134 0.142 0.147 0.154 0.161 0.169 0.177 0.184 0.193 0.201 0.211 0.219 0.229 0.238 0.247 0.257 0.266 0.275 0.287 0.297 0.306
S12
ANG 75.1 63.0 55.7 51.5 48.3 46.4 45.7 45.3 44.8 45.2 45.3 45.4 45.9 46.1 46.4 46.5 46.6 46.7 46.5 46.3 46.0 45.6 45.3 44.6 44.0 43.5 42.9 42.1 41.4 40.4 MAG 0.951 0.852 0.752 0.674 0.612 0.567 0.532 0.507 0.486 0.471 0.461 0.452 0.445 0.438 0.433 0.428 0.423 0.419 0.411 0.405 0.399 0.394 0.389 0.386 0.383 0.381 0.380 0.385 0.389 0.391
S22
ANG -13.6 -24.1 -31.3 -35.8 -39.0 -41.5 -43.6 -45.4 -47.1 -48.8 -50.5 -52.3 -54.0 -55.6 -57.3 -59.0 -61.1 -63.1 -65.2 -68.0 -70.4 -73.4 -76.4 -80.0 -83.8 -88.0 -91.4 -95.4 -99.2 -103.0
isc Websitewww.iscsemi.cn
INCHANGE Semiconductor
isc RF Product Specification
isc Silicon NPN RF Transistor
VCE = 5 V, IC = 1 mA, ZO = 50 Freque. MHz 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 2100 2200 2300 2400 2500 2600 2700 2800 2900 3000 MAG 0.977 0.944 0.897 0.848 0.793 0.744 0.689 0.646 0.605 0.570 0.542 0.516 0.500 0.489 0.478 0.470 0.465 0.461 0.458 0.458 0.460 0.460 0.462 0.465 0.469 0.472 0.476 0.479 0.482 0.487
2SC4571
S11
ANG -14.2 -28.0 -41.9 -54.9 -68.0 -79.1 -90.6 -101.4 -111.3 -121.0 -130.0 -138.2 -145.7 -153.1 -160.1 -166.6 -172.8 -178.5 175.7 170.1 165.0 160.3 155.6 151.1 146.7 142.5 138.7 134.7 130.9 127.2 MAG 1.896 1.948 1.954 1.907 1.878 1.745 1.697 1.630 1.579 1.519 1.455 1.393 1.325 1.270 1.213 1.168 1.128 1.086 1.047 1.012 0.980 0.946 0.922 0.889 0.867 0.843 0.820 0.799 0.779 0.761
S21
ANG 165.0 150.9 139.2 128.9 119.8 110.9 102.7 95.2 88.5 82.1 76.5 71.2 66.3 61.8 57.5 53.5 49.5 45.9 42.5 39.2 36.1 33.1 30.4 27.7 25.3 22.8 20.5 18.5 16.5 14.8 MAG 0.036 0.069 0.095 0.116 0.131 0.143 0.151 0.155 0.157 0.161 0.162 0.162 0.161 0.163 0.163 0.163 0.164 0.166 0.169 0.173 0.178 0.183 0.191 0.198 0.206 0.216 0.227 0.239 0.251 0.263
S12
ANG 79.9 69.5 61.1 53.7 47.9 42.2 38.6 35.1 32.9 31.1 30.0 29.1 29.0 29.4 29.3 30.5 31.6 33.5 34.4 36.3 38.0 39.5 40.9 42.3 43.0 44.2 44.8 45.2 45.2 45.4 MAG 0.988 0.954 0.911 0.867 0.820 0.786 0.752 0.726 0.702 0.684 0.669 0.661 0.650 0.643 0.637 0.631 0.624 0.621 0.614 0.608 0.603 0.599 0.593 0.591 0.588 0.588 0.586 0.589 0.591 0.593
S22
ANG -7.4 -14.2 -20.1 -25.2 -29.5 -33.4 -36.6 -39.6 -42.3 -44.8 -47.4 -49.9 -52.2 -54.3 -56.7 -59.0 -61.6 -64.0 -66.7 -69.6 -72.6 -76.0 -79.3 -83.1 -87.2 -91.3 -95.3 -99.4 -103.3 -107.1
isc Websitewww.iscsemi.cn
6
INCHANGE Semiconductor
isc RF Product Specification
isc Silicon NPN RF Transistor
VCE = 3 V, IC = 5 mA, ZO = 50 Freque. MHz 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 2100 2200 2300 2400 2500 2600 2700 2800 2900 3000 MAG 0.871 0.735 0.608 0.512 0.441 0.400 0.367 0.349 0.338 0.328 0.324 0.319 0.319 0.321 0.322 0.324 0.328 0.329 0.333 0.339 0.343 0.348 0.353 0.357 0.364 0.368 0.373 .377 0.383 0.388
2SC4571
S11
ANG -26.4 -53.1 -76.6 -96.0 -112.5 -125.0 -136.5 -146.0 -154.7 -162.1 -168.9 -175.4 179.0 173.8 168.7 164.3 160.2 155.9 152.0 148.2 144.7 141.6 138.2 135.1 132.3 129.3 126.5 123.8 121.1 118.3 MAG 8.583 7.998 7.129 6.208 5.402 4.681 4.139 3.707 3.362 3.061 2.817 2.611 2.436 2.296 2.159 2.048 1.950 1.858 1.777 1.716 1.647 1.587 1.537 1.487 1.446 1.403 1.366 1.330 1.298 1.268
S21
ANG 152.2 133.6 119.2 107.9 99.1 92.2 86.3 81.3 76.6 72.4 68.5 64.8 61.4 57.9 54.7 51.6 48.5 45.8 42.7 40.0 37.4 34.7 32.2 29.6 27.1 24.8 22.4 19.9 17.9 15.7 MAG 0.037 0.061 0.076 0.087 0.096 0.105 0.116 0.124 0.133 0.142 0.153 0.162 0.172 0.181 0.192 0.201 0.212 0.221 0.234 0.242 0.253 0.264 0.274 0.284 0.293 0.305 0.313 0.324 0.334 0.344
S12
ANG 69.9 59.2 53.4 51.2 49.9 49.8 50.1 50.1 50.5 50.5 50.5 50.1 49.9 49.7 49.5 48.8 48.2 47.6 46.9 46.1 45.2 44.1 43.3 42.3 41.0 40.4 39.2 38.1 36.9 35.8 MAG 0.894 0.730 0.601 0.515 0.452 0.410 0.379 0.358 0.341 0.327 0.317 0.311 0.305 0.300 0.294 0.289 0.284 0.280 0.272 0.265 0.258 0.254 0.249 0.246 0.243 0.244 0.245 0.250 0.255 0.260
S22
ANG -21.2 -35.0 -42.3 -46.6 -49.3 -51.2 -52.9 -54.5 -55.7 -57.7 -59.3 -61.0 -62.6 -64.3 -65.8 -67.7 -69.3 -71.4 -73.9 -77.0 -79.9 -83.4 -86.6 -90.8 -95.6 -100.0 -104.3 -109.0 -112.8 -116.4
isc Websitewww.iscsemi.cn
INCHANGE Semiconductor
isc RF Product Specification
isc Silicon NPN RF Transistor
VCE = 3 V, IC = 3 mA, ZO = 50 Freque. MHz 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 2100 2200 2300 2400 2500 2600 2700 2800 2900 3000 MAG 0.912 0.834 0.733 0.645 0.563 0.508 0.459 0.426 0.403 0.387 0.374 0.365 0.360 0.359 0.358 0.359 0.360 0.361 0.363 0.369 0.372 0.375 0.380 0.385 0.391 0.394 0.401 0.405 0.410 0.415
2SC4571
S11
ANG -21.6 -42.0 -61.8 -79.5 -95.8 -108.6 -121.1 -131.5 -140.9 -149.5 -157.2 -164.3 -170.7 -176.5 177.6 172.6 167.7 163.3 158.7 154.5 150.4 146.9 143.2 139.8 136.5 133.3 130.2 127.0 124.2 121.3 MAG 5.515 5.289 4.989 4.582 4.216 3.750 3.422 3.114 2.860 2.628 2.441 2.273 2.132 2.007 1.899 1.801 1.720 1.648 1.582 1.513 1.462 1.409 1.366 1.323 1.287 1.250 1.215 1.183 1.156 1.130
S21
ANG 157.0 140.5 127.0 115.9 106.2 98.3 91.1 85.1 79.8 74.7 70.4 66.1 62.3 58.7 55.2 51.8 48.3 45.3 42.3 39.2 36.5 33.7 31.0 28.4 25.8 23.4 20.9 18.5 16.3 14.2 MAG 0.039 0.068 0.088 0.102 0.111 0.119 0.126 0.134 0.140 0.147 0.155 0.161 0.169 0.176 0.184 0.192 0.200 0.209 0.218 0.227 0.236 0.246 0.256 0.265 0.275 0.284 0.295 0.305 0.314 0.324
S12
ANG 74.4 61.3 54.0 48.7 46.0 44.2 43.4 43.0 42.7 43.0 43.2 43.0 43.3 43.6 43.7 43.8 43.6 43.6 43.4 43.1 42.9 42.4 41.8 41.4 40.3 39.8 39.0 38.2 37.4 36.5 MAG 0.941 0.829 0.720 0.634 0.567 0.520 0.483 0.457 0.435 0.418 0.408 0.399 0.390 0.383 0.378 0.371 0.366 0.361 0.355 0.347 0.340 0.336 0.331 0.328 0.326 0.326 0.327 0.332 0.337 0.342
S22
ANG -15.6 -27.6 -35.4 -40.9 -44.5 -47.3 -49.6 -51.6 -53.4 -55.3 -57.2 -59.1 -60.8 -62.6 -64.5 -66.4 -68.5 -70.6 -72.9 -76.1 -78.8 -82.3 -85.3 -89.4 -93.8 -98.0 -102.2 -106.2 -110.2 -113.8
isc Websitewww.iscsemi.cn
8
INCHANGE Semiconductor
isc RF Product Specification
isc Silicon NPN RF Transistor
VCE = 3 V, IC = 1 mA, ZO = 50 Freque. MHz 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 2100 2200 2300 2400 2500 2600 2700 2800 2900 3000 MAG 0.970 0.940 0.890 0.839 0.782 0.734 0.680 0.638 0.598 0.565 0.541 0.518 0.504 0.494 0.485 0.478 0.476 0.472 0.470 0.472 0.473 0.474 0.476 0.480 0.484 0.488 0.491 0.495 0.498 0.501
2SC4571
S11
ANG _14.8 _29.4 _43.9 _57.5 _71.0 _82.5 _94.1 _105.2 _115.4 _125.0 _133.7 _142.1 _149.6 _156.8 _163.5 _169.9 _175.8 178.5 173.0 167.6 162.6 158.0 153.5 149.2 144.9 141.0 137.0 133.2 129.7 125.9 MAG 1.932 1.944 1.949 1.894 1.854 1.723 1.674 1.606 1.548 1.486 1.422 1.354 1.287 1.235 1.183 1.136 1.098 1.054 1.019 0.987 0.952 0.922 0.897 0.866 0.846 0.823 0.801 0.781 0.763 0.745
S21
ANG 163.6 149.6 137.4 127.0 117.6 108.5 100.1 92.6 85.8 79.4 73.9 68.5 63.6 59.0 54.8 50.8 46.9 43.4 39.9 36.6 33.8 30.8 28.0 25.4 23.0 20.7 18.5 16.4 14.6 12.9 MAG 0.042 0.079 0.109 0.132 0.149 0.161 0.168 0.174 0.177 0.179 0.180 0.179 0.180 0.180 0.179 0.180 0.181 0.182 0.184 0.189 0.193 0.198 0.205 0.212 0.220 0.230 0.240 0.252 0.263 0.275
S12
ANG 78.2 68.4 59.0 51.8 45.3 40.1 36.1 32.7 30.0 28.5 27.2 26.0 25.9 26.0 26.2 27.0 27.5 29.1 30.4 31.9 33.5 34.5 36.1 37.3 38.3 39.3 39.9 4.02 4.04 4.05 MAG 0.984 0.945 0.895 0.846 0.795 0.757 0.720 0.691 0.666 0.646 0.633 0.621 0.610 0.603 0.596 0.590 0.584 0.578 0.573 0.566 0.560 0.556 0.551 0.548 0.546 0.547 0.546 0.550 0.553 0.555
S22
ANG -8.3 -16.0 -22.6 -28.2 -32.8 -36.9 -40.5 -43.7 -46.5 -49.3 -51.8 -54.5 -56.9 -59.3 -61.8 -64.3 -66.9 -69.6 -72.3 -75.6 -78.9 -82.5 -86.1 -90.2 -94.5 -98.9 -103.1 -107.3 -111.3 -115.2
isc Websitewww.iscsemi.cn

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